Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

PSMNR58-30YLHX MOSFET N-CH 30V 300A LFPAK56 Nexperia USA Inc.	22,409 In Stock	1 : ¥25.70000 Cut Tape (CT) 1,500 : ¥12.37935 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	380A (Tc)	4.5V, 10V	0.67mOhm @ 25A, 10V	2.2V @ 2mA	188 nC @ 10 V	±20V	6160 pF @ 15 V	-	333W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SOT-1023, 4-LFPAK
PMN30XPEX MOSFET P-CH 20V 5.3A 6TSOP Nexperia USA Inc.	1,074 In Stock	1 : ¥3.94000 Cut Tape (CT) 3,000 : ¥1.07026 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	5.3A (Ta)	2.5V, 4.5V	34mOhm @ 5.3A, 4.5V	1.25V @ 250µA	17 nC @ 10 V	±12V	1465 pF @ 10 V	-	560mW (Ta), 6.25W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
PSMNR70-30YLHX MOSFET N-CH 30V 300A LFPAK56 Nexperia USA Inc.	0 In Stock Check Lead Time	1 : ¥14.12000 Cut Tape (CT) 1,500 : ¥6.71775 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	300A (Tc)	4.5V, 10V	0.82mOhm @ 25A, 10V	2.2V @ 2mA	157 nC @ 10 V	±20V	4852 pF @ 15 V	-	268W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.