Single FETs, MOSFETs

Results: 2
Manufacturer
Texas InstrumentsVishay Siliconix
Series
-NexFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
60 V400 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
4.6mOhm @ 22A, 10V1Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 25 V3840 pF @ 30 V
Power Dissipation (Max)
3.1W (Ta), 156W (Tc)74W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-VSONP (5x6)TO-220AB
Package / Case
8-PowerTDFNTO-220-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB
IRF730PBF
MOSFET N-CH 400V 5.5A TO220AB
Vishay Siliconix
25,801
In Stock
1 : ¥8.70000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
400 V
5.5A (Tc)
10V
1Ohm @ 3.3A, 10V
4V @ 250µA
38 nC @ 10 V
±20V
700 pF @ 25 V
-
74W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
8-Power TDFN
CSD18531Q5AT
MOSFET N-CH 60V 100A 8VSON
Texas Instruments
1,758
In Stock
1 : ¥16.17000
Cut Tape (CT)
250 : ¥10.42904
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Ta)
4.5V, 10V
4.6mOhm @ 22A, 10V
2.3V @ 250µA
43 nC @ 10 V
±20V
3840 pF @ 30 V
-
3.1W (Ta), 156W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.