Single FETs, MOSFETs

Results: 6
Manufacturer
Alpha & Omega Semiconductor Inc.onsemiSTMicroelectronics
Series
-DeepGATE™, STripFET™ VIISTripFET™ II
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
5A (Ta), 32A (Tc)23A (Tc)25A (Tc)32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
35mOhm @ 12.5A, 10V37mOhm @ 10A, 10V37mOhm @ 32A, 10V38mOhm @ 12.5A, 10V65mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA2.7V @ 250µA4V @ 250µA4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V40 nC @ 10 V44 nC @ 10 V52 nC @ 5 V55 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 25 V920 pF @ 50 V1450 pF @ 25 V1550 pF @ 25 V1710 pF @ 25 V2000 pF @ 50 V
Power Dissipation (Max)
2.5W (Ta), 100W (Tc)40W (Tc)70W (Tc)100W (Tc)
Supplier Device Package
DPAKTO-252 (DPAK)
Stocking Options
Environmental Options
Media
Marketplace Product
6Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
MFG_DPAK(TO252-3)
STD25NF10T4
MOSFET N-CH 100V 25A DPAK
STMicroelectronics
900
In Stock
1 : ¥12.64000
Cut Tape (CT)
2,500 : ¥5.24272
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
25A (Tc)
10V
38mOhm @ 12.5A, 10V
4V @ 250µA
55 nC @ 10 V
±20V
1550 pF @ 25 V
-
100W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NTD6414ANT4G
MOSFET N-CH 100V 32A DPAK
onsemi
5,561
In Stock
17,500
Factory
1 : ¥13.71000
Cut Tape (CT)
2,500 : ¥6.18021
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
32A (Tc)
10V
37mOhm @ 32A, 10V
4V @ 250µA
40 nC @ 10 V
±20V
1450 pF @ 25 V
-
100W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252, (D-Pak)
AOD482
MOSFET N-CH 100V 5A/32A TO252
Alpha & Omega Semiconductor Inc.
98,201
In Stock
1 : ¥5.75000
Cut Tape (CT)
2,500 : ¥3.07868
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
5A (Ta), 32A (Tc)
4.5V, 10V
37mOhm @ 10A, 10V
2.7V @ 250µA
44 nC @ 10 V
±20V
2000 pF @ 50 V
-
2.5W (Ta), 100W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
MFG_DPAK(TO252-3)
STD25N10F7
MOSFET N-CH 100V 25A DPAK
STMicroelectronics
4,769
In Stock
1 : ¥9.77000
Cut Tape (CT)
2,500 : ¥4.03164
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
25A (Tc)
10V
35mOhm @ 12.5A, 10V
4.5V @ 250µA
14 nC @ 10 V
±20V
920 pF @ 50 V
-
40W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
MFG_DPAK(TO252-3)
STD15NF10T4
MOSFET N-CH 100V 23A DPAK
STMicroelectronics
2,936
In Stock
1 : ¥11.33000
Cut Tape (CT)
2,500 : ¥4.70169
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
23A (Tc)
10V
65mOhm @ 12A, 10V
4V @ 250µA
40 nC @ 10 V
±20V
870 pF @ 25 V
-
70W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
MFG_DPAK(TO252-3)
STD25NF10LA
MOSFET N-CH 100V 25A DPAK
STMicroelectronics
5,692
In Stock
1 : ¥13.22000
Cut Tape (CT)
2,500 : ¥5.46454
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
25A (Tc)
4.5V, 10V
35mOhm @ 12.5A, 10V
2.5V @ 250µA
52 nC @ 5 V
±16V
1710 pF @ 25 V
-
100W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.