Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SI2343CDS-T1-GE3 MOSFET P-CH 30V 5.9A SOT23-3 Vishay Siliconix	17,637 In Stock	1 : ¥4.93000 Cut Tape (CT) 3,000 : ¥1.65113 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	5.9A (Tc)	4.5V, 10V	45mOhm @ 4.2A, 10V	2.5V @ 250µA	21 nC @ 10 V	±20V	590 pF @ 15 V	-	1.25W (Ta), 2.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IRF7855TRPBF MOSFET N-CH 60V 12A 8SO Infineon Technologies	13,870 In Stock	1 : ¥14.37000 Cut Tape (CT) 4,000 : ¥6.46805 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	12A (Ta)	10V	9.4mOhm @ 12A, 10V	4.9V @ 100µA	39 nC @ 10 V	±20V	1560 pF @ 25 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IXTT120N15P MOSFET N-CH 150V 120A TO268 Littelfuse Inc.	270 In Stock 990 Factory	1 : ¥95.64000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	120A (Tc)	10V	16mOhm @ 500mA, 10V	5V @ 250µA	150 nC @ 10 V	±20V	4900 pF @ 25 V	-	600W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-268AA	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IRF3805STRL-7PP MOSFET N-CH 55V 160A D2PAK Infineon Technologies	2,105 In Stock	1 : ¥32.68000 Cut Tape (CT) 800 : ¥19.70691 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	55 V	160A (Tc)	10V	2.6mOhm @ 140A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	7820 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.