Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesonsemiVishay Siliconix
Series
-SIPMOS®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
25 V30 V600 V
Current - Continuous Drain (Id) @ 25°C
21mA (Ta)220mA (Ta)12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
0V, 10V2.7V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
24mOhm @ 7.8A, 10V4Ohm @ 400mA, 4.5V500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id
1.06V @ 250µA2.5V @ 250µA2.7V @ 8µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V2.1 nC @ 5 V12 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
9.5 pF @ 10 V28 pF @ 25 V435 pF @ 15 V
FET Feature
-Depletion Mode
Power Dissipation (Max)
350mW (Ta)500mW (Ta)3.2W (Ta), 15.6W (Tc)
Supplier Device Package
PG-SOT23PowerPAK® 1212-8SOT-23-3
Package / Case
PowerPAK® 1212-8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDV301N
MOSFET N-CH 25V 220MA SOT23
onsemi
305,692
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.45080
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
220mA (Ta)
2.7V, 4.5V
4Ohm @ 400mA, 4.5V
1.06V @ 250µA
0.7 nC @ 4.5 V
±8V
9.5 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
PowerPAK 1212-8
SIS412DN-T1-GE3
MOSFET N-CH 30V 12A PPAK1212-8
Vishay Siliconix
55,695
In Stock
1 : ¥4.68000
Cut Tape (CT)
3,000 : ¥1.77239
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
12A (Tc)
4.5V, 10V
24mOhm @ 7.8A, 10V
2.5V @ 250µA
12 nC @ 10 V
±20V
435 pF @ 15 V
-
3.2W (Ta), 15.6W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SOT-23-3
BSS126H6327XTSA2
MOSFET N-CH 600V 21MA SOT23-3
Infineon Technologies
111,687
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.26954
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
21mA (Ta)
0V, 10V
500Ohm @ 16mA, 10V
2.7V @ 8µA
2.1 nC @ 5 V
±20V
28 pF @ 25 V
Depletion Mode
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.