Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesNexperia USA Inc.
Series
SIPMOS®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
50 V100 V
Current - Continuous Drain (Id) @ 25°C
180mA (Ta)15A (Tc)49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V10V
Rds On (Max) @ Id, Vgs
21.5mOhm @ 15A, 10V240mOhm @ 10.6A, 10V7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 1.54mA2.1V @ 1mA2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.35 nC @ 5 V35.8 nC @ 5 V48 nC @ 10 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
36 pF @ 25 V1280 pF @ 25 V4640 pF @ 25 V
Power Dissipation (Max)
350mW (Ta), 1.14W (Tc)128W (Tc)147W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
LFPAK56, Power-SO8PG-TO252-3TO-236AB
Package / Case
SC-100, SOT-669TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
BSS84AK,215
MOSFET P-CH 50V 180MA TO236AB
Nexperia USA Inc.
663,548
In Stock
1 : ¥1.81000
Cut Tape (CT)
3,000 : ¥0.30406
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
180mA (Ta)
10V
7.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.35 nC @ 5 V
±20V
36 pF @ 25 V
-
350mW (Ta), 1.14W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
LFPAK56/POWER-SO8/SOT669
BUK9Y22-100E,115
MOSFET N-CH 100V 49A LFPAK56
Nexperia USA Inc.
4,581
In Stock
1 : ¥10.18000
Cut Tape (CT)
1,500 : ¥4.46581
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
49A (Tc)
5V
21.5mOhm @ 15A, 10V
2.1V @ 1mA
35.8 nC @ 5 V
±10V
4640 pF @ 25 V
-
147W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
TO252-3
SPD15P10PGBTMA1
MOSFET P-CH 100V 15A TO252-3
Infineon Technologies
9,658
In Stock
1 : ¥13.63000
Cut Tape (CT)
2,500 : ¥6.14051
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
15A (Tc)
10V
240mOhm @ 10.6A, 10V
2.1V @ 1.54mA
48 nC @ 10 V
±20V
1280 pF @ 25 V
-
128W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.