Single FETs, MOSFETs

Results: 6
Manufacturer
Nexperia USA Inc.onsemiToshiba Semiconductor and Storage
Series
-TrenchMOS™U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V40 V50 V60 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)5.5A (Ta)6A (Ta)25A (Tc)69A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 10V4.5V, 10V5V5V, 10V10V
Rds On (Max) @ Id, Vgs
5.6mOhm @ 25A, 10V8mOhm @ 20A, 10V29.8mOhm @ 3A, 4.5V42mOhm @ 5A, 10V61mOhm @ 4.7A, 10V3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id
1V @ 1mA1.2V @ 1mA1.5V @ 1mA2.1V @ 1mA3V @ 250µA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 4.5 V12.8 nC @ 4.5 V23.8 nC @ 10 V30 nC @ 10 V66.8 nC @ 10 V
Vgs (Max)
±8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V560 pF @ 15 V840 pF @ 10 V1060 pF @ 30 V1567 pF @ 25 V5026 pF @ 25 V
Power Dissipation (Max)
225mW (Ta)500mW (Ta)1W (Ta)66W (Tc)75W (Tc)167W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
LFPAK33LFPAK56, Power-SO8SOT-23-3 (TO-236)SOT-23FUFM
Package / Case
3-SMD, Flat LeadsSC-100, SOT-669SOT-1210, 8-LFPAK33 (5-Lead)SOT-23-3 Flat LeadsTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
89,117
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.63495
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
6A (Ta)
1.8V, 10V
42mOhm @ 5A, 10V
1.2V @ 1mA
8.2 nC @ 4.5 V
±12V
560 pF @ 15 V
-
1W (Ta)
150°C (TJ)
-
-
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SOT 23-3
BSS138LT1G
MOSFET N-CH 50V 200MA SOT23-3
onsemi
371,445
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.52959
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
5V
3.5Ohm @ 200mA, 5V
1.5V @ 1mA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
77,767
In Stock
1 : ¥4.68000
Cut Tape (CT)
3,000 : ¥1.05261
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
5.5A (Ta)
1.5V, 4.5V
29.8mOhm @ 3A, 4.5V
1V @ 1mA
12.8 nC @ 4.5 V
±8V
840 pF @ 10 V
-
500mW (Ta)
150°C (TJ)
-
-
Surface Mount
UFM
3-SMD, Flat Leads
LFPAK56/POWER-SO8/SOT669
PSMN5R6-60YLX
MOSFET N-CH 60V 100A LFPAK56
Nexperia USA Inc.
10,548
In Stock
1 : ¥8.54000
Cut Tape (CT)
1,500 : ¥3.75998
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Tc)
5V, 10V
5.6mOhm @ 25A, 10V
2.1V @ 1mA
66.8 nC @ 10 V
±20V
5026 pF @ 25 V
-
167W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
LFPAK56/POWER-SO8/SOT669
PSMP061-60YEX
PSMP061-60YE/SOT669/LFPAK
Nexperia USA Inc.
1,586
In Stock
1 : ¥7.39000
Cut Tape (CT)
1,500 : ¥3.15131
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
25A (Tc)
4.5V, 10V
61mOhm @ 4.7A, 10V
3V @ 250µA
30 nC @ 10 V
±20V
1060 pF @ 30 V
-
66W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
LFPAK33
BUK7M8R0-40EX
MOSFET N-CH 40V 69A LFPAK33
Nexperia USA Inc.
1,474
In Stock
1 : ¥7.06000
Cut Tape (CT)
1,500 : ¥2.39622
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
69A (Tc)
10V
8mOhm @ 20A, 10V
4V @ 1mA
23.8 nC @ 10 V
±20V
1567 pF @ 25 V
-
75W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.