Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedRohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V50 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
0.9V, 4.5V1.8V, 4.5V
Rds On (Max) @ Id, Vgs
450mOhm @ 600mA, 4.5V2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
800mV @ 1mA1V @ 250µA
Vgs (Max)
±6V±8V
Input Capacitance (Ciss) (Max) @ Vds
26 pF @ 10 V60.67 pF @ 16 V
Power Dissipation (Max)
150mW (Ta)290mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-323UMT3F
Package / Case
SC-70, SOT-323SC-85
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
UMT3F
RU1J002YNTCL
MOSFET N-CH 50V 200MA UMT3F
Rohm Semiconductor
643,448
In Stock
1 : ¥2.05000
Cut Tape (CT)
3,000 : ¥0.34818
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
0.9V, 4.5V
2.2Ohm @ 200mA, 4.5V
800mV @ 1mA
-
±8V
26 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
UMT3F
SC-85
SOT-323
DMG1012UW-7
MOSFET N-CH 20V 1A SOT323
Diodes Incorporated
532,280
In Stock
8,988,000
Factory
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.46763
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1A (Ta)
1.8V, 4.5V
450mOhm @ 600mA, 4.5V
1V @ 250µA
0.74 nC @ 4.5 V
±6V
60.67 pF @ 16 V
-
290mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.