Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedNexperia USA Inc.Texas Instruments
Series
-NexFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V25 V30 V50 V
Current - Continuous Drain (Id) @ 25°C
180mA (Ta)200mA (Ta)12.6A (Ta), 20A (Tc)14A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 10V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
11mOhm @ 10A, 10V15mOhm @ 5A, 4.5V3.5Ohm @ 220mA, 10V4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
900mV @ 250µA1.5V @ 250µA2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.44 nC @ 4.5 V3.8 nC @ 4.5 V31 nC @ 8 V
Vgs (Max)
±8V+16V, -12V±20V
Input Capacitance (Ciss) (Max) @ Vds
13 pF @ 10 V50 pF @ 10 V530 pF @ 12.5 V1344 pF @ 10 V
Power Dissipation (Max)
200mW (Ta)260mW (Ta), 1.1W (Tc)720mW (Ta)3W (Ta)
Supplier Device Package
8-VSONP (5x6)SOT-323U-DFN2020-6 (Type F)
Package / Case
6-UDFN Exposed Pad8-PowerTDFNSC-70, SOT-323
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS138W-7-F
MOSFET N-CH 50V 200MA SOT323
Diodes Incorporated
745,847
In Stock
1 : ¥2.38000
Cut Tape (CT)
3,000 : ¥0.40362
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
10V
3.5Ohm @ 220mA, 10V
1.5V @ 250µA
-
±20V
50 pF @ 10 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
SOT-323
NX3020NAKW,115
MOSFET N-CH 30V 180MA SOT323
Nexperia USA Inc.
304,373
In Stock
1 : ¥1.56000
Cut Tape (CT)
3,000 : ¥0.26537
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
180mA (Ta)
2.5V, 10V
4.5Ohm @ 100mA, 10V
1.5V @ 250µA
0.44 nC @ 4.5 V
±20V
13 pF @ 10 V
-
260mW (Ta), 1.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
8-Power TDFN
CSD16412Q5A
MOSFET N-CH 25V 14A/52A 8VSON
Texas Instruments
3,473
In Stock
1 : ¥7.55000
Cut Tape (CT)
2,500 : ¥2.48346
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
14A (Ta), 52A (Tc)
4.5V, 10V
11mOhm @ 10A, 10V
2.3V @ 250µA
3.8 nC @ 4.5 V
+16V, -12V
530 pF @ 12.5 V
-
3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
U-DFN2020-6 Type F
DMP1012UFDF-13
MOSFET P-CH 12V 12.6A/20A 6UDFN
Diodes Incorporated
0
In Stock
Check Lead Time
10,000 : ¥1.08777
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
P-Channel
MOSFET (Metal Oxide)
12 V
12.6A (Ta), 20A (Tc)
1.8V, 4.5V
15mOhm @ 5A, 4.5V
900mV @ 250µA
31 nC @ 8 V
±8V
1344 pF @ 10 V
-
720mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.