Single FETs, MOSFETs

Results: 5
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDDiodes IncorporatedonsemiVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V50 V100 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)220mA (Ta)270mA (Ta)4A (Ta)60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4V, 10V4.5V, 10V5V
Rds On (Max) @ Id, Vgs
1.6mOhm @ 25A, 10V52mOhm @ 4A, 10V3Ohm @ 500mA, 10V3.5Ohm @ 200mA, 5V4.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.4V @ 250µA1.5V @ 1mA1.6V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.8 nC @ 10 V11.7 nC @ 10 V625 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
27 pF @ 25 V50 pF @ 25 V87 pF @ 25 V464 pF @ 15 V22000 pF @ 10 V
Power Dissipation (Max)
225mW (Ta)350mW (Ta)380mW (Ta)1.4W (Ta)6.25W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
PowerPAK® SO-8SOT-23SOT-23-3SOT-23-3 (TO-236)
Package / Case
PowerPAK® SO-8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
BSS138LT1G
MOSFET N-CH 50V 200MA SOT23-3
onsemi
362,194
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.52959
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
5V
3.5Ohm @ 200mA, 5V
1.5V @ 1mA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMP10H4D2S-7
MOSFET P-CH 100V 270MA SOT23
Diodes Incorporated
69,442
In Stock
2,712,000
Factory
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.71143
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
270mA (Ta)
4V, 10V
4.2Ohm @ 500mA, 10V
3V @ 250µA
1.8 nC @ 10 V
±20V
87 pF @ 25 V
-
380mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMG3402L-7
MOSFET N-CH 30V 4A SOT23
Diodes Incorporated
255,447
In Stock
5,874,000
Factory
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.64179
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
4A (Ta)
2.5V, 10V
52mOhm @ 4A, 10V
1.4V @ 250µA
11.7 nC @ 10 V
±12V
464 pF @ 15 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
PowerPAK SO-8
SI7157DP-T1-GE3
MOSFET P-CH 20V 60A PPAK SO-8
Vishay Siliconix
1,286
In Stock
1 : ¥12.23000
Cut Tape (CT)
3,000 : ¥5.04802
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
60A (Tc)
2.5V, 10V
1.6mOhm @ 25A, 10V
1.4V @ 250µA
625 nC @ 10 V
±12V
22000 pF @ 10 V
-
6.25W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
BSS138
BSS138
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
199,939
In Stock
1 : ¥1.31000
Cut Tape (CT)
3,000 : ¥0.22873
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
220mA (Ta)
4.5V, 10V
3Ohm @ 500mA, 10V
1.6V @ 250µA
-
±20V
27 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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of 5

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.