Single FETs, MOSFETs

Results: 2
Manufacturer
Micro Commercial CoRohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Ta)3A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
105mOhm @ 3A, 10V180mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.5 nC @ 4.5 V6 nC @ 4.5 V
Vgs (Max)
±10V±16V
Input Capacitance (Ciss) (Max) @ Vds
110 pF @ 10 V247 pF @ 30 V
Power Dissipation (Max)
800mW (Ta)1.2W
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23TUMT3
Package / Case
3-SMD, Flat LeadsTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23
SI2310B-TP
MOSFET N-CH 60V 3A SOT23
Micro Commercial Co
103,030
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.53750
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
3A (Tj)
4.5V, 10V
105mOhm @ 3A, 10V
1.3V @ 250µA
6 nC @ 4.5 V
±16V
247 pF @ 30 V
-
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
TUMT3
RUF015N02TL
MOSFET N-CH 20V 1.5A TUMT3
Rohm Semiconductor
13,849
In Stock
This product has a maximum purchase limit
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥1.30867
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.5A (Ta)
1.8V, 4.5V
180mOhm @ 1.5A, 4.5V
1V @ 1mA
2.5 nC @ 4.5 V
±10V
110 pF @ 10 V
-
800mW (Ta)
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.