Single FETs, MOSFETs

Results: 5
Manufacturer
Alpha & Omega Semiconductor Inc.Littelfuse Inc.Microchip TechnologySTMicroelectronics
Series
aMOS5™HiPerFET™, Ultra X3MDmesh™ M6POWER MOS 8™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
600 V1000 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)28A (Tc)30A (Tc)78A
Rds On (Max) @ Id, Vgs
38mOhm @ 39A, 10V99mOhm @ 15A, 10V125mOhm @ 14A, 10V700mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA4.75V @ 250µA5V @ 1mA5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V44.3 nC @ 10 V70 nC @ 10 V150 nC @ 10 V
Vgs (Max)
±20V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
1960 pF @ 100 V2993 pF @ 100 V4700 pF @ 25 V4845 pF @ 25 V
Power Dissipation (Max)
208W (Tc)357W (Tc)625W (Tc)780W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
D3PAKTO-247TO-247-3TO-263 (D2PAK)
Package / Case
TO-247-3TO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
1,255
In Stock
1 : ¥24.38000
Cut Tape (CT)
800 : ¥16.20410
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
28A (Tc)
10V
125mOhm @ 14A, 10V
4.5V @ 250µA
39 nC @ 10 V
±20V
2993 pF @ 100 V
-
357W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-247-3 HiP
STW36N60M6
MOSFET N-CHANNEL 600V 30A TO247
STMicroelectronics
600
In Stock
1 : ¥51.56000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
30A (Tc)
10V
99mOhm @ 15A, 10V
4.75V @ 250µA
44.3 nC @ 10 V
±25V
1960 pF @ 100 V
-
208W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
D3PAK
APT18M100S
MOSFET N-CH 1000V 18A D3PAK
Microchip Technology
10
In Stock
1 : ¥86.78000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
18A (Tc)
10V
700mOhm @ 9A, 10V
5V @ 1mA
150 nC @ 10 V
±30V
4845 pF @ 25 V
-
625W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
20
In Stock
1 : ¥42.36000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
28A (Tc)
10V
125mOhm @ 14A, 10V
4.5V @ 250µA
39 nC @ 10 V
±20V
2993 pF @ 100 V
-
357W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
Littelfuse_Power_Semi_TO247-3L
IXFH78N60X3
MOSFET ULTRA JCT 600V 78A TO247
Littelfuse Inc.
1
In Stock
1 : ¥110.91000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
78A
10V
38mOhm @ 39A, 10V
5V @ 4mA
70 nC @ 10 V
±20V
4700 pF @ 25 V
-
780W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
Showing
of 5

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.