Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiTexas Instruments
Series
NexFET™PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
3.3A (Ta), 16A (Tc)100A (Ta)
Rds On (Max) @ Id, Vgs
9.4mOhm @ 13A, 10V110mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
3.4V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
880 pF @ 50 V2670 pF @ 50 V
Power Dissipation (Max)
2.3W (Ta), 35W (Tc)3.2W (Ta), 96W (Tc)
Supplier Device Package
8-MLP (3.3x3.3)8-VSONP (5x6)
Package / Case
8-PowerTDFN8-PowerWDFN
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
CSD19533Q5A
MOSFET N-CH 100V 100A 8VSON
Texas Instruments
32,957
In Stock
1 : ¥12.31000
Cut Tape (CT)
2,500 : ¥5.09330
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
100A (Ta)
6V, 10V
9.4mOhm @ 13A, 10V
3.4V @ 250µA
35 nC @ 10 V
±20V
2670 pF @ 50 V
-
3.2W (Ta), 96W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
8 POWER WDFN
FDMC3612
MOSFET N-CH 100V 3.3A/16A 8MLP
onsemi
7,544
In Stock
660,000
Factory
1 : ¥10.92000
Cut Tape (CT)
3,000 : ¥4.51605
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
3.3A (Ta), 16A (Tc)
6V, 10V
110mOhm @ 3.3A, 10V
4V @ 250µA
21 nC @ 10 V
±20V
880 pF @ 50 V
-
2.3W (Ta), 35W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-MLP (3.3x3.3)
8-PowerWDFN
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.