Single FETs, MOSFETs

Results: 2
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDDiodes Incorporated
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
340mA (Ta)5A (Ta)
Rds On (Max) @ Id, Vgs
44mOhm @ 4.3A, 10V5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.4 nC @ 10 V22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
18 pF @ 30 V1287 pF @ 25 V
Power Dissipation (Max)
350mW (Ta)1.2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23TSOT-26
Package / Case
SOT-23-6 Thin, TSOT-23-6TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TSOT-26
DMN6040SVT-7
MOSFET N CH 60V 5A TSOT26
Diodes Incorporated
6,242
In Stock
24,000
Factory
1 : ¥4.19000
Cut Tape (CT)
3,000 : ¥1.40746
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
5A (Ta)
4.5V, 10V
44mOhm @ 4.3A, 10V
3V @ 250µA
22.4 nC @ 10 V
±20V
1287 pF @ 25 V
-
1.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
2N7002E
2N7002EY
N-CHANNEL SMD MOSFET ESD PROTECT
ANBON SEMICONDUCTOR (INT'L) LIMITED
77,384
In Stock
1 : ¥1.15000
Cut Tape (CT)
3,000 : ¥0.19370
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
340mA (Ta)
4.5V, 10V
5Ohm @ 300mA, 10V
2.5V @ 250µA
2.4 nC @ 10 V
±20V
18 pF @ 30 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.