Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

NVTFS9D6P04M8LTAG MOSFET P-CH 40V 13A/64A 8WDFN onsemi	18,924 In Stock 3,000 Factory	1 : ¥11.66000 Cut Tape (CT) 1,500 : ¥5.13151 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	13A (Ta), 64A (Tc)	4.5V, 10V	9.5mOhm @ 20A, 10V	2.4V @ 580µA	34.6 nC @ 10 V	±20V	2312 pF @ 20 V	-	3.2W (Ta), 75W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NVTFWS014P04M8LTAG MOSFET P-CH 40V 11.3A/49A 8WDFN onsemi	2,047 In Stock	1 : ¥7.96000 Cut Tape (CT) 1,500 : ¥3.49157 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	11.3A (Ta), 49A (Tc)	4.5V, 10V	13.8mOhm @ 15A, 10V	2.4V @ 420µA	26.5 nC @ 10 V	±20V	1734 pF @ 20 V	-	3.2W (Ta), 61W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
SQS407ENW-T1_GE3 MOSFET P-CH 30V 16A PPAK1212-8W Vishay Siliconix	27,483 In Stock	1 : ¥8.13000 Cut Tape (CT) 3,000 : ¥3.36950 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	16A (Tc)	4.5V, 10V	10.8mOhm @ 12A, 10V	2.5V @ 250µA	77 nC @ 10 V	±20V	4572 pF @ 20 V	-	62.5W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® 1212-8W	PowerPAK® 1212-8W

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.