Single FETs, MOSFETs

Results: 3

Filters

Stacked

Scrolling

Showing

of 3

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

PMV19XNEAR MOSFET N-CH 30V 6A TO236AB Nexperia USA Inc.	3,166 In Stock	1 : ¥3.45000 Cut Tape (CT) 3,000 : ¥0.92295 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	6A (Ta)	1.8V, 4.5V	24mOhm @ 6A, 4.5V	900mV @ 250µA	18.6 nC @ 4.5 V	±8V	1150 pF @ 15 V	-	610mW (Ta), 8.3W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
FDMC86260 MOSFET N CH 150V 5.4A POWER 33 onsemi	16,704 In Stock	1 : ¥20.28000 Cut Tape (CT) 3,000 : ¥9.13138 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	5.4A (Ta), 16A (Tc)	6V, 10V	34mOhm @ 5.4A, 10V	4V @ 250µA	21 nC @ 10 V	±20V	1330 pF @ 75 V	-	2.3W (Ta), 54W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Power33	8-PowerWDFN
IXTT48P20P MOSFET P-CH 200V 48A TO268 Littelfuse Inc.	390 In Stock	1 : ¥119.29000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	48A (Tc)	10V	85mOhm @ 500mA, 10V	4.5V @ 250µA	103 nC @ 10 V	±20V	5400 pF @ 25 V	-	462W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Showing

of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.