Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

DMP3056LDM-7 MOSFET P-CH 30V 4.3A SOT-26 Diodes Incorporated	133,898 In Stock	1 : ¥3.37000 Cut Tape (CT) 3,000 : ¥1.12146 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	4.3A (Ta)	4.5V, 10V	45mOhm @ 5A, 10V	2.1V @ 250µA	21.1 nC @ 10 V	±20V	948 pF @ 25 V	-	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-26	SOT-23-6
SIS407DN-T1-GE3 MOSFET P-CH 20V 25A PPAK1212-8 Vishay Siliconix	48,826 In Stock	1 : ¥5.58000 Cut Tape (CT) 3,000 : ¥2.97605 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	25A (Tc)	1.8V, 4.5V	9.5mOhm @ 15.3A, 4.5V	1V @ 250µA	93.8 nC @ 8 V	±8V	2760 pF @ 10 V	-	3.6W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
FDS9431A MOSFET P-CH 20V 3.5A 8SOIC onsemi	4,386 In Stock 5,000 Factory	1 : ¥7.39000 Cut Tape (CT) 2,500 : ¥2.80158 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	3.5A (Ta)	2.5V, 4.5V	130mOhm @ 3.5A, 4.5V	1V @ 250µA	8.5 nC @ 4.5 V	±8V	405 pF @ 10 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.