Single FETs, MOSFETs

Showing

of 3

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IPD70P04P409ATMA2 MOSFET P-CH 40V 73A TO252-3 Infineon Technologies	9,808 In Stock	1 : ¥12.40000 Cut Tape (CT) 2,500 : ¥5.59794 Tape & Reel (TR)	OptiMOS®-P2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	73A (Tc)	-	8.9mOhm @ 70A, 10V	4V @ 120µA	70 nC @ 10 V	±20V	4810 pF @ 25 V	-	75W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD85P04P407ATMA2 MOSFET P-CH 40V 85A TO252-3 Infineon Technologies	18,396 In Stock	1 : ¥14.53000 Cut Tape (CT) 2,500 : ¥6.56952 Tape & Reel (TR)	OptiMOS®-P2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	85A (Tc)	-	7.3mOhm @ 85A, 10V	4V @ 150µA	89 nC @ 10 V	±20V	6085 pF @ 25 V	-	88W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
TJ80S04M3L,LXHQ MOSFET P-CH 40V 80A DPAK Toshiba Semiconductor and Storage	5,565 In Stock	1 : ¥17.57000 Cut Tape (CT) 2,000 : ¥5.16775 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	80A (Ta)	6V, 10V	5.2mOhm @ 40A, 10V	3V @ 1mA	158 nC @ 10 V	+10V, -20V	7770 pF @ 10 V	-	100W (Tc)	175°C	-	-	Surface Mount	DPAK+	TO-252-3, DPAK (2 Leads + Tab), SC-63

Showing

of 3

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.