Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IPB019N08N3GATMA1 MOSFET N-CH 80V 180A TO263-7 Infineon Technologies	7,622 In Stock	1 : ¥50.33000 Cut Tape (CT) 1,000 : ¥28.54713 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	180A (Tc)	6V, 10V	1.9mOhm @ 100A, 10V	3.5V @ 270µA	206 nC @ 10 V	±20V	14200 pF @ 40 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7	TO-263-7, D2PAK (6 Leads + Tab)
IXFT220N20X3HV MOSFET N-CH 200V 220A TO268HV Littelfuse Inc.	1,593 In Stock	1 : ¥169.20000 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	220A (Tc)	10V	6.2mOhm @ 110A, 10V	4.5V @ 4mA	204 nC @ 10 V	±20V	13600 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-268HV (IXFT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
BSZ070N08LS5ATMA1 MOSFET N-CH 80V 40A TSDSON Infineon Technologies	11 In Stock	1 : ¥12.31000 Cut Tape (CT) 5,000 : ¥5.34928 Tape & Reel (TR)	OptiMOS™ 5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	40A (Tc)	4.5V, 10V	7mOhm @ 20A, 10V	2.3V @ 36µA	5 nC @ 4.5 V	±20V	2340 pF @ 40 V	-	69W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.