Single FETs, MOSFETs

Results: 3
Manufacturer
onsemiVishay Siliconix
Series
-TrenchFET®TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
40 V60 V1200 V
Current - Continuous Drain (Id) @ 25°C
185mA (Ta)30A (Tc)114A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V20V
Rds On (Max) @ Id, Vgs
5.1mOhm @ 15A, 10V110mOhm @ 20A, 20V6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 250µA3.5V @ 250µA4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
1.7 nC @ 15 V27 nC @ 10 V56 nC @ 20 V
Vgs (Max)
±20V+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
23 pF @ 25 V1154 pF @ 800 V1450 pF @ 25 V
Power Dissipation (Max)
350mW (Ta)136W (Tc)179W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
D2PAK-7PowerPAK® SO-8SOT-23-3 (TO-236)
Package / Case
PowerPAK® SO-8TO-236-3, SC-59, SOT-23-3TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
TP0610K-T1-E3
MOSFET P-CH 60V 185MA SOT23-3
Vishay Siliconix
768,788
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥1.04982
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
185mA (Ta)
4.5V, 10V
6Ohm @ 500mA, 10V
3V @ 250µA
1.7 nC @ 15 V
±20V
23 pF @ 25 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
D2PAK-7
NVBG080N120SC1
SICFET N-CH 1200V 30A D2PAK-7
onsemi
626
In Stock
64,800
Factory
1 : ¥121.51000
Cut Tape (CT)
800 : ¥71.59770
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A (Tc)
20V
110mOhm @ 20A, 20V
4.3V @ 5mA
56 nC @ 20 V
+25V, -15V
1154 pF @ 800 V
-
179W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PowerPAK-SO-8L
SQJ152EP-T1_GE3
AUTOMOTIVE N-CHANNEL 40 V (D-S)
Vishay Siliconix
3,000
In Stock
1 : ¥7.39000
Cut Tape (CT)
3,000 : ¥2.78312
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
114A (Tc)
10V
5.1mOhm @ 15A, 10V
3.5V @ 250µA
27 nC @ 10 V
±20V
1450 pF @ 25 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.