Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

DMN2058UW-7 MOSFET N-CH 20V 3.5A SOT323 Diodes Incorporated	65,813 In Stock 693,000 Factory	1 : ¥3.04000 Cut Tape (CT) 3,000 : ¥0.54644 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	3.5A (Ta)	1.8V, 10V	42mOhm @ 3A, 10V	1.2V @ 250µA	7.7 nC @ 10 V	±12V	281 pF @ 10 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
SISA40DN-T1-GE3 MOSFET N-CH 20V 43.7A/162A PPAK Vishay Siliconix	2,736 In Stock	1 : ¥9.77000 Cut Tape (CT) 3,000 : ¥2.39272 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	43.7A (Ta), 162A (Tc)	2.5V, 10V	1.1mOhm @ 10A, 10V	1.5V @ 250µA	53 nC @ 10 V	+12V, -8V	3415 pF @ 10 V	-	3.7W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
PSMN1R5-30YLC,115 MOSFET N-CH 30V 100A LFPAK56 Nexperia USA Inc.	4,904 In Stock	1 : ¥12.56000 Cut Tape (CT) 1,500 : ¥5.50177 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	100A (Tc)	4.5V, 10V	1.55mOhm @ 25A, 10V	1.95V @ 1mA	65 nC @ 10 V	±20V	4044 pF @ 15 V	-	179W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.