Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon TechnologiesonsemiRohm SemiconductorVishay Siliconix
Series
-OptiMOS™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
12 V20 V100 V120 V650 V
Current - Continuous Drain (Id) @ 25°C
200mA4.2A (Ta)7.1A (Tc)21A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
7.6mOhm @ 100A, 10V35mOhm @ 5.1A, 4.5V38mOhm @ 3.6A, 4.5V156mOhm @ 6.7A, 18V5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2.5V @ 250µA4V @ 130µA5.6V @ 3.33mA
Gate Charge (Qg) (Max) @ Vgs
1.8 nC @ 10 V7 nC @ 4.5 V25 nC @ 4.5 V38 nC @ 18 V101 nC @ 10 V
Vgs (Max)
±8V±20V+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
14 pF @ 25 V460 pF @ 500 V594.3 pF @ 10 V1225 pF @ 6 V6640 pF @ 60 V
Power Dissipation (Max)
350mW (Ta)800mW (Ta)1.25W (Ta), 2.5W (Tc)100W188W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO220-3SOT-23-3SOT-23-3 (TO-236)TO-263-7
Package / Case
TO-220-3TO-236-3, SC-59, SOT-23-3TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS123
MOSFET N-CH 100V 170MA SOT23-3
onsemi
21,648
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.51984
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
200mA
4.5V, 10V
5Ohm @ 200mA, 10V
2.5V @ 250µA
1.8 nC @ 10 V
±20V
14 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMN2075U-7
MOSFET N-CH 20V 4.2A SOT23-3
Diodes Incorporated
24,056
In Stock
11,571,000
Factory
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.57291
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
20 V
4.2A (Ta)
2.5V, 4.5V
38mOhm @ 3.6A, 4.5V
1V @ 250µA
7 nC @ 4.5 V
±8V
594.3 pF @ 10 V
-
800mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2333CDS-T1-E3
MOSFET P-CH 12V 7.1A SOT23-3
Vishay Siliconix
63,268
In Stock
1 : ¥4.93000
Cut Tape (CT)
3,000 : ¥1.65846
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
7.1A (Tc)
1.8V, 4.5V
35mOhm @ 5.1A, 4.5V
1V @ 250µA
25 nC @ 4.5 V
±8V
1225 pF @ 6 V
-
1.25W (Ta), 2.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-220-3
IPP076N12N3GXKSA1
MOSFET N-CH 120V 100A TO220-3
Infineon Technologies
222
In Stock
1 : ¥24.30000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
120 V
100A (Tc)
10V
7.6mOhm @ 100A, 10V
4V @ 130µA
101 nC @ 10 V
±20V
6640 pF @ 60 V
-
188W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
SCT3series
SCT3120AW7TL
SICFET N-CH 650V 21A TO263-7
Rohm Semiconductor
788
In Stock
1 : ¥87.11000
Cut Tape (CT)
1,000 : ¥51.32154
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
21A (Tc)
-
156mOhm @ 6.7A, 18V
5.6V @ 3.33mA
38 nC @ 18 V
+22V, -4V
460 pF @ 500 V
-
100W
175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.