Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay Siliconix
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
660mA (Ta)2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V2.5V, 4.5V
Rds On (Max) @ Id, Vgs
57mOhm @ 3.6A, 4.5V480mOhm @ 780mA, 4.5V
Vgs(th) (Max) @ Id
850mV @ 250µA1.2V @ 250µA
Vgs (Max)
±6V±8V
Power Dissipation (Max)
310mW (Ta)710mW (Ta)
Supplier Device Package
SOT-23-3 (TO-236)SOT-723
Package / Case
SOT-723TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23(TO-236)
SI2302CDS-T1-BE3
N-CHANNEL 20-V (D-S) MOSFET
Vishay Siliconix
17,977
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.87982
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.6A (Ta)
2.5V, 4.5V
57mOhm @ 3.6A, 4.5V
850mV @ 250µA
5.5 nC @ 4.5 V
±8V
-
-
710mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-723_631AA
NTK3139PT1G
MOSFET P-CH 20V 660MA SOT723
onsemi
42
In Stock
1 : ¥3.78000
Cut Tape (CT)
4,000 : ¥0.83711
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
660mA (Ta)
1.5V, 4.5V
480mOhm @ 780mA, 4.5V
1.2V @ 250µA
-
±6V
170 pF @ 16 V
-
310mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-723
SOT-723
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.