Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedInfineon Technologiesonsemi
Series
-OptiMOS™PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V80 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)12A (Ta), 40A (Tc)40A (Tc)66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 20A, 10V7mOhm @ 21A, 10V7.5mOhm @ 20A, 10V400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA2V @ 250µA2.5V @ 120µA3.8V @ 36µA
Gate Charge (Qg) (Max) @ Vgs
1.3 nC @ 10 V10 nC @ 10 V29.5 nC @ 10 V41 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
56 pF @ 16 V670 pF @ 15 V2080 pF @ 40 V2940 pF @ 40 V
Power Dissipation (Max)
500mW (Ta)2.1W (Ta), 26W (Tc)57W (Tc)69W (Tc)
Supplier Device Package
8-PQFN (3.3x3.3), Power33PG-TSDSON-8-26PG-TSDSON-8-FLX2-DFN1006-3
Package / Case
3-XFDFN8-PowerTDFN8-PowerWDFN
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TSDSON-8
BSZ065N03LSATMA1
MOSFET N-CH 30V 12A/40A TSDSON
Infineon Technologies
20,776
In Stock
1 : ¥6.81000
Cut Tape (CT)
5,000 : ¥2.45821
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
12A (Ta), 40A (Tc)
4.5V, 10V
6.5mOhm @ 20A, 10V
2V @ 250µA
10 nC @ 10 V
±20V
670 pF @ 15 V
-
2.1W (Ta), 26W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
8-PowerTDFN
BSZ075N08NS5ATMA1
MOSFET N-CH 80V 40A 8TSDSON
Infineon Technologies
65,652
In Stock
1 : ¥8.87000
Cut Tape (CT)
5,000 : ¥5.26864
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
40A (Tc)
6V, 10V
7.5mOhm @ 20A, 10V
3.8V @ 36µA
29.5 nC @ 10 V
±20V
2080 pF @ 40 V
-
69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSDSON-8-26
8-PowerTDFN
8-PQFN Pin View
FDMC007N08LC
MOSFET N-CHANNEL 80V 66A 8PQFN
onsemi
8,074
In Stock
1 : ¥17.98000
Cut Tape (CT)
3,000 : ¥7.52735
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
66A (Tc)
4.5V, 10V
7mOhm @ 21A, 10V
2.5V @ 120µA
41 nC @ 10 V
±20V
2940 pF @ 40 V
-
57W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PQFN (3.3x3.3), Power33
8-PowerWDFN
X2-DFN1006-3
DMN2450UFB4-7B
MOSFET N-CH 20V 1A X2-DFN1006-3
Diodes Incorporated
24,511
In Stock
1 : ¥2.46000
Cut Tape (CT)
10,000 : ¥0.31458
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1A (Ta)
1.8V, 4.5V
400mOhm @ 600mA, 4.5V
900mV @ 250µA
1.3 nC @ 10 V
±12V
56 pF @ 16 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
X2-DFN1006-3
3-XFDFN
Showing
of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.