Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

EPC2034C GANFET N-CH 200V 48A DIE EPC	23,008 In Stock	1 : ¥75.94000 Cut Tape (CT) 500 : ¥47.88582 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	GaNFET (Gallium Nitride)	200 V	48A (Ta)	5V	8mOhm @ 20A, 5V	2.5V @ 7mA	11 nC @ 5 V	+6V, -4V	1140 pF @ 100 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
G3R160MT12J SIC MOSFET N-CH 19A TO263-7 GeneSiC Semiconductor	1,009 In Stock	1 : ¥59.60000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	19A (Tc)	15V	208mOhm @ 10A, 15V	2.7V @ 5mA (Typ)	23 nC @ 15 V	+20V, -10V	724 pF @ 800 V	-	128W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.