Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesRohm Semiconductor
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
20 V150 V
Current - Continuous Drain (Id) @ 25°C
150mA (Ta)24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V10V
Rds On (Max) @ Id, Vgs
95mOhm @ 14A, 10V2Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 100µA5V @ 250µA
Vgs (Max)
±8V±30V
Input Capacitance (Ciss) (Max) @ Vds
12 pF @ 10 V890 pF @ 25 V
Power Dissipation (Max)
100mW (Ta)140W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
TO-252AA (DPAK)VML0806
Package / Case
3-SMD, No LeadTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
VML0806
RV1C002UNT2CL
MOSFET N-CH 20V 150MA VML0806
Rohm Semiconductor
757,360
In Stock
1 : ¥2.22000
Cut Tape (CT)
8,000 : ¥0.34654
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
20 V
150mA (Ta)
1.2V, 4.5V
2Ohm @ 150mA, 4.5V
1V @ 100µA
-
±8V
12 pF @ 10 V
-
100mW (Ta)
150°C (TJ)
Surface Mount
VML0806
3-SMD, No Lead
TO252-3
IRFR24N15DTRPBF
MOSFET N-CH 150V 24A DPAK
Infineon Technologies
1,729
In Stock
1 : ¥11.49000
Cut Tape (CT)
2,000 : ¥4.76054
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
24A (Tc)
10V
95mOhm @ 14A, 10V
5V @ 250µA
45 nC @ 10 V
±30V
890 pF @ 25 V
-
140W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.