Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon Technologiesonsemi
Series
-CoolMOS™HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
50 V55 V650 V
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)5.1A (Ta)45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
50mOhm @ 24.8A, 10V57.5mOhm @ 3.1A, 10V3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.6V @ 250µA4V @ 250µA4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs
2.4 nC @ 10 V14 nC @ 10 V102 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
27 pF @ 25 V340 pF @ 25 V4975 pF @ 400 V
Power Dissipation (Max)
350mW (Ta)1W (Ta)227W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
PG-TO263-3SOT-223SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AATO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS138
MOSFET N-CH 50V 220MA SOT23-3
onsemi
190,815
In Stock
1,440,000
Factory
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.48926
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
220mA (Ta)
4.5V, 10V
3Ohm @ 500mA, 10V
1.6V @ 250µA
2.4 nC @ 10 V
±20V
27 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT223-3L
IRFL024ZTRPBF
MOSFET N-CH 55V 5.1A SOT223
Infineon Technologies
96,543
In Stock
1 : ¥4.02000
Cut Tape (CT)
2,500 : ¥1.88615
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
5.1A (Ta)
10V
57.5mOhm @ 3.1A, 10V
4V @ 250µA
14 nC @ 10 V
±20V
340 pF @ 25 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB65R050CFD7AATMA1
AUTOMOTIVE_COOLMOS PG-TO263-3
Infineon Technologies
830
In Stock
1 : ¥63.38000
Cut Tape (CT)
1,000 : ¥32.93656
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
45A (Tc)
10V
50mOhm @ 24.8A, 10V
4.5V @ 1.24mA
102 nC @ 10 V
±30V
4975 pF @ 400 V
-
227W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.