Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedonsemiVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
1.3A (Ta)5A (Ta)110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
6.9mOhm @ 30A, 10V44mOhm @ 4.3A, 10V160mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 4.5 V22.4 nC @ 10 V345 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
162 pF @ 10 V1287 pF @ 25 V11400 pF @ 25 V
Power Dissipation (Max)
500mW (Ta)1.2W (Ta)3.75W (Ta), 375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
SOT-23-3TO-263 (D2PAK)TSOT-26
Package / Case
SOT-23-6 Thin, TSOT-23-6TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
NDS331N
MOSFET N-CH 20V 1.3A SUPERSOT3
onsemi
145,297
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥1.20594
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.3A (Ta)
2.7V, 4.5V
160mOhm @ 1.5A, 4.5V
1V @ 250µA
5 nC @ 4.5 V
±8V
162 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-263 (D2Pak)
SUM110P06-07L-E3
MOSFET P-CH 60V 110A TO263
Vishay Siliconix
63,950
In Stock
1 : ¥30.13000
Cut Tape (CT)
800 : ¥18.18246
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
110A (Tc)
4.5V, 10V
6.9mOhm @ 30A, 10V
3V @ 250µA
345 nC @ 10 V
±20V
11400 pF @ 25 V
-
3.75W (Ta), 375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TSOT-26
DMN6040SVT-7
MOSFET N CH 60V 5A TSOT26
Diodes Incorporated
5,242
In Stock
15,000
Factory
1 : ¥4.19000
Cut Tape (CT)
3,000 : ¥1.40746
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
5A (Ta)
4.5V, 10V
44mOhm @ 4.3A, 10V
3V @ 250µA
22.4 nC @ 10 V
±20V
1287 pF @ 25 V
-
1.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.