Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay Siliconix
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
50 V200 V
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
400mOhm @ 5.4A, 10V3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.6V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.4 nC @ 10 V43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
27 pF @ 25 V800 pF @ 25 V
Power Dissipation (Max)
350mW (Ta)3W (Ta), 74W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23-3TO-263 (D2PAK)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS138
MOSFET N-CH 50V 220MA SOT23-3
onsemi
199,100
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.48926
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
220mA (Ta)
4.5V, 10V
3Ohm @ 500mA, 10V
1.6V @ 250µA
2.4 nC @ 10 V
±20V
27 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-263AB
IRF630SPBF
MOSFET N-CH 200V 9A D2PAK
Vishay Siliconix
309
In Stock
1 : ¥13.38000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
9A (Tc)
10V
400mOhm @ 5.4A, 10V
4V @ 250µA
43 nC @ 10 V
±20V
800 pF @ 25 V
-
3W (Ta), 74W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.