Single FETs, MOSFETs

Results: 2
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDDiodes Incorporated
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
310mA (Ta)4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
55mOhm @ 4.4A, 10V3Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id
1.4V @ 250µA2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.87 nC @ 10 V7.2 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
22 pF @ 25 V680 pF @ 15 V
Power Dissipation (Max)
370mW (Ta)1.2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMN65D8L-7
MOSFET N-CH 60V 310MA SOT23
Diodes Incorporated
373,434
In Stock
270,000
Factory
1 : ¥1.40000
Cut Tape (CT)
3,000 : ¥0.23992
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
310mA (Ta)
5V, 10V
3Ohm @ 115mA, 10V
2V @ 250µA
0.87 nC @ 10 V
±20V
22 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
AS3401
AS3401
P-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
49,912
In Stock
1 : ¥2.30000
Cut Tape (CT)
3,000 : ¥0.38299
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4.4A (Ta)
2.5V, 10V
55mOhm @ 4.4A, 10V
1.4V @ 250µA
7.2 nC @ 10 V
±12V
680 pF @ 15 V
-
1.2W (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.