Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedVishay Siliconix
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V240 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V2.5V, 10V
Rds On (Max) @ Id, Vgs
38mOhm @ 3.6A, 4.5V4Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.3 nC @ 4.5 V8 nC @ 10 V
Vgs (Max)
±8V±20V
Power Dissipation (Max)
360mW (Ta)940mW
Supplier Device Package
SOT-23-3SOT-23-3 (TO-236)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMN2056U-7
MOSFET N-CHANNEL 20V 4A SOT23-3
Diodes Incorporated
105,461
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.69704
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 4.5V
38mOhm @ 3.6A, 4.5V
1V @ 250µA
4.3 nC @ 4.5 V
±8V
339 pF @ 10 V
-
940mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
TN2404K-T1-E3
MOSFET N-CH 240V 200MA SOT23-3
Vishay Siliconix
8,335
In Stock
1 : ¥7.14000
Cut Tape (CT)
3,000 : ¥2.71766
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
240 V
200mA (Ta)
2.5V, 10V
4Ohm @ 300mA, 10V
2V @ 250µA
8 nC @ 10 V
±20V
-
-
360mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.