Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesonsemiToshiba Semiconductor and Storage
Series
OptiMOS™PowerTrench®U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V80 V
Current - Continuous Drain (Id) @ 25°C
1.25A (Ta)6A (Ta)23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
2.6mOhm @ 50A, 10V27.6mOhm @ 4A, 10V170mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA3V @ 250µA3.8V @ 115µA
Gate Charge (Qg) (Max) @ Vgs
10.1 nC @ 10 V13.8 nC @ 10 V92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
430 pF @ 30 V450 pF @ 15 V6800 pF @ 40 V
Power Dissipation (Max)
500mW (Ta)2.5W (Ta), 156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C
Supplier Device Package
PG-TDSON-8-6SOT-23-3UFM
Package / Case
3-SMD, Flat Leads8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDN5618P
MOSFET P-CH 60V 1.25A SUPERSOT3
onsemi
10,680
In Stock
363,000
Factory
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.14967
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
1.25A (Ta)
4.5V, 10V
170mOhm @ 1.25A, 10V
3V @ 250µA
13.8 nC @ 10 V
±20V
430 pF @ 30 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
BSC026N08NS5ATMA1
MOSFET N-CH 80V 23A/100A TDSON
Infineon Technologies
8,921
In Stock
1 : ¥25.78000
Cut Tape (CT)
5,000 : ¥12.04173
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
23A (Ta), 100A (Tc)
6V, 10V
2.6mOhm @ 50A, 10V
3.8V @ 115µA
92 nC @ 10 V
±20V
6800 pF @ 40 V
-
2.5W (Ta), 156W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
13,499
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥1.29354
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
6A (Ta)
4.5V, 10V
27.6mOhm @ 4A, 10V
2.5V @ 1mA
10.1 nC @ 10 V
±20V
450 pF @ 15 V
-
500mW (Ta)
150°C
Surface Mount
UFM
3-SMD, Flat Leads
Showing
of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.