Single FETs, MOSFETs

Results: 4
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes IncorporatedVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V55 V60 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)1.6A (Tc)2.1A (Ta)90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 15A, 10V160mOhm @ 2.1A, 4.5V345mOhm @ 1.25A, 10V7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id
2V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.3 nC @ 4.5 V4.1 nC @ 4.5 V64.2 nC @ 10 V
Vgs (Max)
±12V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V210 pF @ 30 V300 pF @ 25 V2826 pF @ 15 V
Power Dissipation (Max)
200mW (Ta)1W (Ta), 1.7W (Tc)1.25W (Ta)2.7W (Ta)
Supplier Device Package
PowerDI5060-8SOT-23-3SOT-23-3 (TO-236)SOT-323
Package / Case
3-SMD, SOT-23-3 Variant8-PowerTDFNSC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-323
2N7002W-7-F
MOSFET N-CH 60V 115MA SOT323
Diodes Incorporated
268,806
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.52275
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 50mA, 5V
2V @ 250µA
-
±20V
50 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-323
SC-70, SOT-323
SOT-23-3
AO3422
MOSFET N-CH 55V 2.1A SOT23-3
Alpha & Omega Semiconductor Inc.
1,017,739
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.86945
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
2.1A (Ta)
2.5V, 4.5V
160mOhm @ 2.1A, 4.5V
2V @ 250µA
3.3 nC @ 4.5 V
±12V
300 pF @ 25 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant
SOT-23-3
SI2309CDS-T1-GE3
MOSFET P-CH 60V 1.6A SOT23-3
Vishay Siliconix
25,348
In Stock
1 : ¥4.35000
Cut Tape (CT)
3,000 : ¥1.46767
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
1.6A (Tc)
4.5V, 10V
345mOhm @ 1.25A, 10V
3V @ 250µA
4.1 nC @ 4.5 V
±20V
210 pF @ 30 V
-
1W (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
DMP3007SPS-13
DMP3007SPS-13
MOSFET P-CH 30V 90A PWRDI5060-8
Diodes Incorporated
2,419
In Stock
1 : ¥7.31000
Cut Tape (CT)
2,500 : ¥2.48554
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
90A (Tc)
4.5V, 10V
7mOhm @ 15A, 10V
3V @ 250µA
64.2 nC @ 10 V
±25V
2826 pF @ 15 V
-
2.7W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerDI5060-8
8-PowerTDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.