Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesonsemiVishay Siliconix
Series
Dual Cool™, PowerTrench®HEXFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V20 V30 V150 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)4.1A (Ta)15A (Ta), 99A (Tc)21A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 20A, 10V6.5mOhm @ 15A, 10V32mOhm @ 5.3A, 4.5V57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id
850mV @ 250µA1V @ 250µA2.35V @ 50µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 4.5 V18 nC @ 4.5 V31 nC @ 10 V108 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 6 V2155 pF @ 25 V8205 pF @ 75 V
Power Dissipation (Max)
710mW (Ta)750mW (Ta)2.7W (Ta), 37W (Tc)3.2W (Ta), 156W (Tc)
Supplier Device Package
8-Dual Cool™888-PQFN-Dual (3.3x3.3)SOT-23-3 (TO-236)
Package / Case
8-PowerVDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
Vishay Siliconix
142,825
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.87982
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.6A (Ta)
2.5V, 4.5V
57mOhm @ 3.6A, 4.5V
850mV @ 250µA
5.5 nC @ 4.5 V
±8V
-
-
710mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2333DS-T1-E3
MOSFET P-CH 12V 4.1A SOT23-3
Vishay Siliconix
42,127
In Stock
1 : ¥6.81000
Cut Tape (CT)
3,000 : ¥2.58532
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
4.1A (Ta)
1.8V, 4.5V
32mOhm @ 5.3A, 4.5V
1V @ 250µA
18 nC @ 4.5 V
±8V
1100 pF @ 6 V
-
750mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
8-PQFN
FDMT800150DC
MOSFET N-CH 150V 15A/99A 8DUAL
onsemi
9,370
In Stock
9,000
Factory
1 : ¥41.79000
Cut Tape (CT)
3,000 : ¥30.88939
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
15A (Ta), 99A (Tc)
6V, 10V
6.5mOhm @ 15A, 10V
4V @ 250µA
108 nC @ 10 V
±20V
8205 pF @ 75 V
-
3.2W (Ta), 156W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-Dual Cool™88
8-PowerVDFN
IRFHM830DTR2PBF
IRFHM830TRPBF
MOSFET N-CH 30V 21A/40A PQFN
Infineon Technologies
7,863
In Stock
1 : ¥7.39000
Cut Tape (CT)
4,000 : ¥2.76260
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
21A (Ta), 40A (Tc)
4.5V, 10V
3.8mOhm @ 20A, 10V
2.35V @ 50µA
31 nC @ 10 V
±20V
2155 pF @ 25 V
-
2.7W (Ta), 37W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN-Dual (3.3x3.3)
8-PowerVDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.