Single FETs, MOSFETs

Results: 2
Series
U-MOSVIU-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 4.5V
Rds On (Max) @ Id, Vgs
33mOhm @ 4A, 4.5V55mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA-
Vgs (Max)
±8V±12V
Input Capacitance (Ciss) (Max) @ Vds
190 pF @ 30 V410 pF @ 10 V
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
10,309
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.63495
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
4A (Ta)
1.8V, 4.5V
55mOhm @ 4A, 4.5V
-
-
±12V
190 pF @ 30 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SOT-23-3 Flat Leads
SSM3K345R,LF
MOSFET N-CHANNEL 20V 4A SOT23F
Toshiba Semiconductor and Storage
24,398
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.75883
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 4.5V
33mOhm @ 4A, 4.5V
1V @ 1mA
3.6 nC @ 4.5 V
±8V
410 pF @ 10 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.