Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

PMPB11EN,115 MOSFET N-CH 30V 9A DFN2020MD-6 Nexperia USA Inc.	81,845 In Stock	1 : ¥2.55000 Cut Tape (CT) 3,000 : ¥1.01503 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	9A (Ta)	4.5V, 10V	14.5mOhm @ 9A, 10V	2V @ 250µA	20.6 nC @ 10 V	±20V	840 pF @ 10 V	-	1.7W (Ta), 12.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad
CSD19538Q2 MOSFET N-CH 100V 14.4A 6WSON Texas Instruments	28,070 In Stock	1 : ¥4.35000 Cut Tape (CT) 3,000 : ¥1.46767 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	14.4A (Ta)	6V, 10V	59mOhm @ 5A, 10V	3.8V @ 250µA	5.6 nC @ 10 V	±20V	454 pF @ 50 V	-	2.5W (Ta), 20.2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-WSON (2x2)	6-WDFN Exposed Pad
CSD13385F5 MOSFET N-CH 12V 4.3A 3PICOSTAR Texas Instruments	47,086 In Stock	1 : ¥3.86000 Cut Tape (CT) 3,000 : ¥0.82128 Tape & Reel (TR)	FemtoFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	12 V	4.3A (Ta)	1.8V, 4.5V	19mOhm @ 900mA, 4.5V	1.2V @ 250µA	5 nC @ 4.5 V	8V	674 pF @ 6 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	3-PICOSTAR	3-SMD, No Lead

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.