Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon Technologiesonsemi
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V50 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)6A (Ta), 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V
Rds On (Max) @ Id, Vgs
37mOhm @ 7.8A, 10V3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id
1.5V @ 1mA2.4V @ 25µA
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V580 pF @ 25 V
Power Dissipation (Max)
225mW (Ta)2.1W (Ta)
Supplier Device Package
6-PQFN (2x2) (DFN2020)SOT-23-3 (TO-236)
Package / Case
6-PowerVDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
BSS138LT3G
MOSFET N-CH 50V 200MA SOT23-3
onsemi
66,089
In Stock
1 : ¥2.96000
Cut Tape (CT)
10,000 : ¥0.38340
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
5V
3.5Ohm @ 200mA, 5V
1.5V @ 1mA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
6-PowerVDFN
IRFHS9301TRPBF
MOSFET P-CH 30V 6A/13A 6PQFN
Infineon Technologies
23,073
In Stock
1 : ¥5.34000
Cut Tape (CT)
4,000 : ¥1.74863
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
6A (Ta), 13A (Tc)
4.5V, 10V
37mOhm @ 7.8A, 10V
2.4V @ 25µA
13 nC @ 10 V
±20V
580 pF @ 25 V
-
2.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-PQFN (2x2) (DFN2020)
6-PowerVDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.