Single FETs, MOSFETs

Results: 3
Manufacturer
Alpha & Omega Semiconductor Inc.Nexperia USA Inc.Vishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
360mA (Ta)5.6A (Tc)32A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 20A, 10V42mOhm @ 4.3A, 10V1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA2.5V @ 250µA2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 4.5 V9 nC @ 10 V105 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V340 pF @ 20 V3505 pF @ 15 V
Power Dissipation (Max)
350mW (Ta)1.25W (Ta), 2.1W (Tc)7.3W (Ta), 83W (Tc)
Supplier Device Package
8-DFN (5x6)SOT-23-3 (TO-236)TO-236AB
Package / Case
8-PowerSMD, Flat LeadsTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002P,215
MOSFET N-CH 60V 360MA TO236AB
Nexperia USA Inc.
441,346
In Stock
1 : ¥1.97000
Cut Tape (CT)
3,000 : ¥0.32700
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
60 V
360mA (Ta)
10V
1.6Ohm @ 500mA, 10V
2.4V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2318CDS-T1-GE3
MOSFET N-CH 40V 5.6A SOT23-3
Vishay Siliconix
3,744
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.97327
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
5.6A (Tc)
4.5V, 10V
42mOhm @ 4.3A, 10V
2.5V @ 250µA
9 nC @ 10 V
±20V
340 pF @ 20 V
-
1.25W (Ta), 2.1W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
8-DFN
AON6407
MOSFET P-CH 30V 32A/85A 8DFN
Alpha & Omega Semiconductor Inc.
35,697
In Stock
1 : ¥7.72000
Cut Tape (CT)
3,000 : ¥3.20311
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
30 V
32A (Ta), 85A (Tc)
6V, 10V
4.5mOhm @ 20A, 10V
2.6V @ 250µA
105 nC @ 10 V
±25V
3505 pF @ 15 V
-
7.3W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
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of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.