Single FETs, MOSFETs

Results: 2
Manufacturer
Rohm SemiconductorToshiba Semiconductor and Storage
Series
-U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
6A (Ta)10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
42mOhm @ 5A, 10V84mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1.2V @ 1mA2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 4.5 V15.2 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
560 pF @ 15 V1200 pF @ 30 V
Power Dissipation (Max)
1W (Ta)26W (Ta)
Supplier Device Package
SOT-23FTO-252
Package / Case
SOT-23-3 Flat LeadsTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
89,117
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.63495
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
6A (Ta)
1.8V, 10V
42mOhm @ 5A, 10V
1.2V @ 1mA
8.2 nC @ 4.5 V
±12V
560 pF @ 15 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
RB098BM-40FNSTL
RD3L01BATTL1
PCH -60V -10A POWER MOSFET - RD3
Rohm Semiconductor
3,880
In Stock
1 : ¥9.11000
Cut Tape (CT)
2,500 : ¥3.78035
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
10A (Ta)
4.5V, 10V
84mOhm @ 10A, 10V
2.5V @ 1mA
15.2 nC @ 10 V
±20V
1200 pF @ 30 V
-
26W (Ta)
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.