Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SSM3K339R,LF MOSFET N-CH 40V 2A SOT-23F Toshiba Semiconductor and Storage	74,820 In Stock	1 : ¥2.96000 Cut Tape (CT) 3,000 : ¥0.63495 Tape & Reel (TR)	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	2A (Ta)	1.8V, 8V	185mOhm @ 1A, 8V	1.2V @ 1mA	1.1 nC @ 4.2 V	±12V	130 pF @ 10 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
RSR020P05HZGTL MOSFET P-CH 45V 2A TSMT3 Rohm Semiconductor	9,000 In Stock	1 : ¥5.09000 Cut Tape (CT) 3,000 : ¥1.94964 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	45 V	2A (Ta)	4V, 10V	190mOhm @ 2A, 10V	3V @ 1mA	4.5 nC @ 4.5 V	±20V	500 pF @ 10 V	-	700mW (Ta)	150°C (TJ)	Automotive	AEC-Q101	Surface Mount	TSMT3	SC-96
XP152A12C0MR-G MOSFET P-CH 20V 700MA SOT23 Torex Semiconductor Ltd	100 In Stock	1 : ¥5.42000 Cut Tape (CT) 3,000 : ¥2.06780 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	700mA (Ta)	2.5V, 4.5V	300mOhm @ 400mA, 4.5V	1.2V @ 1mA	-	±12V	180 pF @ 10 V	-	500mW (Ta)	150°C (TA)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.