Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
40 V100 V
Current - Continuous Drain (Id) @ 25°C
6.1A (Ta), 21A (Tc)26A (Tc)
Rds On (Max) @ Id, Vgs
14mOhm @ 5A, 10V38mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.2V @ 20µA3V @ 26µA
Gate Charge (Qg) (Max) @ Vgs
3.8 nC @ 4.5 V8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 25 V520 pF @ 50 V
Power Dissipation (Max)
3.1W (Ta), 36W (Tc)20W (Tc)
Stocking Options
Environmental Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-WDFN
NVTFS5C478NLWFTAG
MOSFET N-CHANNEL 40V 26A 8WDFN
onsemi
1,497
In Stock
1 : ¥15.02000
Cut Tape (CT)
1,500 : ¥4.43735
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
26A (Tc)
4.5V, 10V
14mOhm @ 5A, 10V
2.2V @ 20µA
3.8 nC @ 4.5 V
±20V
400 pF @ 25 V
-
20W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
8-WDFN
NVTFS040N10MCLTAG
PTNG 100V LL U8FL
onsemi
525
In Stock
9,000
Factory
1 : ¥5.25000
Cut Tape (CT)
1,500 : ¥2.25277
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
6.1A (Ta), 21A (Tc)
4.5V, 10V
38mOhm @ 5A, 10V
3V @ 26µA
8.6 nC @ 10 V
±20V
520 pF @ 50 V
-
3.1W (Ta), 36W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.