Single FETs, MOSFETs

Results: 2
Series
CoolMOS™ CECoolMOS™PFD7
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
3A (Tc)5A (Tc)
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.1A, 10V2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 90µA4.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs
3.8 nC @ 10 V9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
134 pF @ 400 V200 pF @ 100 V
Power Dissipation (Max)
6W (Tc)49W (Tc)
Supplier Device Package
PG-SOT223-3-1PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IPD60R1K5CEAUMA1
MOSFET N-CH 600V 5A TO252
Infineon Technologies
8,975
In Stock
1 : ¥5.17000
Cut Tape (CT)
2,500 : ¥1.95318
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
5A (Tc)
10V
1.5Ohm @ 1.1A, 10V
3.5V @ 90µA
9.4 nC @ 10 V
±20V
200 pF @ 100 V
-
49W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
15,320
In Stock
1 : ¥5.01000
Cut Tape (CT)
3,000 : ¥1.88820
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
3A (Tc)
10V
2Ohm @ 500mA, 10V
4.5V @ 30µA
3.8 nC @ 10 V
±20V
134 pF @ 400 V
-
6W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-3-1
TO-261-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.