Single FETs, MOSFETs

Results: 5
Manufacturer
Alpha & Omega Semiconductor Inc.Infineon TechnologiesVishay Siliconix
Series
AlphaSGT™OptiMOS™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V20 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
1.4A (Ta)4.1A (Ta)8.6A (Ta)21A (Ta), 34A (Tc)90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 2.5V1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
6.2mOhm @ 20A, 10V14.5mOhm @ 14.4A, 10V19mOhm @ 20A, 10V32mOhm @ 5.3A, 4.5V160mOhm @ 1.4A, 2.5V
Vgs(th) (Max) @ Id
750mV @ 3.7µA1V @ 250µA2.2V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 2.5 V18 nC @ 4.5 V45 nC @ 10 V190 nC @ 10 V326 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 10 V1100 pF @ 6 V1650 pF @ 30 V11100 pF @ 50 V
Power Dissipation (Max)
500mW (Ta)750mW (Ta)1.9W (Ta)5W (Ta), 43W (Tc)13.6W (Ta), 375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-DFN-EP (3x3)PG-SOT323PowerPAK® SO-8SOT-23-3 (TO-236)TO-263 (D2PAK)
Package / Case
8-PowerVDFNPowerPAK® SO-8SC-70, SOT-323TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS816NWH6327XTSA1
MOSFET N-CH 20V 1.4A SOT323-3
Infineon Technologies
120,396
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.54231
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.4A (Ta)
1.8V, 2.5V
160mOhm @ 1.4A, 2.5V
750mV @ 3.7µA
0.6 nC @ 2.5 V
±8V
180 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT323
SC-70, SOT-323
SOT-23-3
SI2333DS-T1-E3
MOSFET P-CH 12V 4.1A SOT23-3
Vishay Siliconix
49,910
In Stock
1 : ¥6.81000
Cut Tape (CT)
3,000 : ¥2.58532
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
4.1A (Ta)
1.8V, 4.5V
32mOhm @ 5.3A, 4.5V
1V @ 250µA
18 nC @ 4.5 V
±8V
1100 pF @ 6 V
-
750mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
PowerPAK SO-8
SI7461DP-T1-E3
MOSFET P-CH 60V 8.6A PPAK SO-8
Vishay Siliconix
23,208
In Stock
1 : ¥18.96000
Cut Tape (CT)
3,000 : ¥8.54468
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
8.6A (Ta)
4.5V, 10V
14.5mOhm @ 14.4A, 10V
3V @ 250µA
190 nC @ 10 V
±20V
-
-
1.9W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
TO-263 (D2Pak)
SUM90P10-19L-E3
MOSFET P-CH 100V 90A TO263
Vishay Siliconix
9,646
In Stock
1 : ¥35.63000
Cut Tape (CT)
800 : ¥21.49265
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
90A (Tc)
4.5V, 10V
19mOhm @ 20A, 10V
3V @ 250µA
326 nC @ 10 V
±20V
11100 pF @ 50 V
-
13.6W (Ta), 375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
8-DFN
AON7262E
MOSFET N-CH 60V 21A/34A 8DFN
Alpha & Omega Semiconductor Inc.
20,512
In Stock
1 : ¥7.80000
Cut Tape (CT)
5,000 : ¥3.06137
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
21A (Ta), 34A (Tc)
4.5V, 10V
6.2mOhm @ 20A, 10V
2.2V @ 250µA
45 nC @ 10 V
±20V
1650 pF @ 30 V
-
5W (Ta), 43W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN-EP (3x3)
8-PowerVDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.