Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesPanjit International Inc.
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
1.1A (Ta)1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V
Rds On (Max) @ Id, Vgs
140mOhm @ 1.5A, 4.5V370mOhm @ 1.1A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 3.7µA1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 5 V1.6 nC @ 4.5 V
Vgs (Max)
±8V±12V
Input Capacitance (Ciss) (Max) @ Vds
125 pF @ 15 V143 pF @ 10 V
Power Dissipation (Max)
500mW (Ta)1.25W (Ta)
Supplier Device Package
PG-SOT23SOT-23
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS214NH6327XTSA1
MOSFET N-CH 20V 1.5A SOT23-3
Infineon Technologies
292,029
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥0.69154
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.5A (Ta)
2.5V, 4.5V
140mOhm @ 1.5A, 4.5V
1.2V @ 3.7µA
0.8 nC @ 5 V
±12V
143 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
37,515
In Stock
1 : ¥2.13000
Cut Tape (CT)
3,000 : ¥0.43980
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
1.1A (Ta)
1.8V, 4.5V
370mOhm @ 1.1A, 4.5V
1.3V @ 250µA
1.6 nC @ 4.5 V
±8V
125 pF @ 15 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.