Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedToshiba Semiconductor and Storage
Series
-U-MOSVII
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
9A (Ta)30A (Ta)
Rds On (Max) @ Id, Vgs
1.7mOhm @ 20A, 10V19.5mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
2.5V @ 100µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.8 nC @ 4.5 V67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
620 pF @ 15 V4066 pF @ 15 V
Power Dissipation (Max)
1.25W (Ta)2.3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
6-UDFNB (2x2)PowerDI3333-8
Package / Case
6-WDFN Exposed Pad8-PowerVDFN
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerDI3333-8
DMT32M5LFG-13
MOSFET N-CH 30V 30A POWERDI3333
Diodes Incorporated
2,806
In Stock
1 : ¥8.95000
Cut Tape (CT)
3,000 : ¥3.44812
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
30A (Ta)
4.5V, 10V
1.7mOhm @ 20A, 10V
3V @ 250µA
67.7 nC @ 10 V
±20V
4066 pF @ 15 V
-
2.3W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerDI3333-8
8-PowerVDFN
491
In Stock
1 : ¥4.02000
Cut Tape (CT)
3,000 : ¥0.64513
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
9A (Ta)
4.5V, 10V
19.5mOhm @ 4A, 10V
2.5V @ 100µA
4.8 nC @ 4.5 V
±20V
620 pF @ 15 V
-
1.25W (Ta)
150°C (TJ)
-
-
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.