Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesNexperia USA Inc.
Series
CoolMOS™ G7OptiMOS™ 6TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V100 V600 V
Current - Continuous Drain (Id) @ 25°C
350mA (Ta)21A (Ta), 179A (Tc)75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V10V
Rds On (Max) @ Id, Vgs
3mOhm @ 50A, 10V28mOhm @ 28.8A, 10V1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA3.3V @ 109µA4V @ 1.44mA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 4.5 V69 nC @ 10 V123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V4820 pF @ 400 V5200 pF @ 50 V
Power Dissipation (Max)
370mW (Ta)3W (Ta), 208W (Tc)391W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
PG-HSOF-8-2PG-TDSON-8 FLTO-236AB
Package / Case
8-PowerSFN8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002BK,215
MOSFET N-CH 60V 350MA TO236AB
Nexperia USA Inc.
786,391
In Stock
1 : ¥2.13000
Cut Tape (CT)
3,000 : ¥0.36077
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
350mA (Ta)
10V
1.6Ohm @ 500mA, 10V
2.1V @ 250µA
0.6 nC @ 4.5 V
±20V
50 pF @ 10 V
-
370mW (Ta)
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
PG-HSOF-8-2
IPT60R028G7XTMA1
MOSFET N-CH 600V 75A 8HSOF
Infineon Technologies
4,479
In Stock
1 : ¥112.88000
Cut Tape (CT)
2,000 : ¥66.51379
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
75A (Tc)
10V
28mOhm @ 28.8A, 10V
4V @ 1.44mA
123 nC @ 10 V
±20V
4820 pF @ 400 V
-
391W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
6,698
In Stock
1 : ¥26.03000
Cut Tape (CT)
2,500 : ¥12.66044
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
21A (Ta), 179A (Tc)
8V, 10V
3mOhm @ 50A, 10V
3.3V @ 109µA
69 nC @ 10 V
±20V
5200 pF @ 50 V
-
3W (Ta), 208W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
Showing
of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.