Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

2N7002A-7 MOSFET N-CH 60V 180MA SOT23 Diodes Incorporated	174,377 In Stock	1 : ¥2.46000 Cut Tape (CT) 3,000 : ¥0.36651 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	180mA (Ta)	5V, 10V	6Ohm @ 115mA, 5V	2V @ 250µA	-	±20V	23 pF @ 25 V	-	370mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMP2035UVT-7 MOSFET P-CH 20V 6A TSOT26 Diodes Incorporated	72,624 In Stock 1,353,000 Factory	1 : ¥3.94000 Cut Tape (CT) 3,000 : ¥1.05767 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	6A (Ta)	1.8V, 4.5V	35mOhm @ 4A, 4.5V	1.5V @ 250µA	23.1 nC @ 4.5 V	±12V	2400 pF @ 10 V	-	1.2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6
PXP010-20QXJ PXP010-20QX/SOT8002/MLPAK33 Nexperia USA Inc.	2,368 In Stock	1 : ¥5.01000 Cut Tape (CT) 3,000 : ¥1.71585 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	P-Channel	MOSFET (Metal Oxide)	20 V	10.8A (Ta), 37.6A (Tc)	1.8V, 4.5V	10mOhm @ 10.6A, 4.5V	1V @ 250µA	29 nC @ 4.5 V	±12V	1730 pF @ 10 V	-	1.7W (Ta), 21W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	MLPAK33	8-PowerVDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.