Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon Technologiesonsemi
Series
-HEXFET®PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V55 V60 V
Current - Continuous Drain (Id) @ 25°C
115mA (Tc)12.5A (Ta)42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V10V
Rds On (Max) @ Id, Vgs
9mOhm @ 12.5A, 10V20mOhm @ 42A, 10V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA4V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V180 nC @ 10 V
Vgs (Max)
±20V+30V, -20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V2659 pF @ 20 V3500 pF @ 25 V
Power Dissipation (Max)
225mW (Ta)2.5W (Ta)170W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-SOICD2PAKSOT-23-3 (TO-236)
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
2N7002LT1G
MOSFET N-CH 60V 115MA SOT23-3
onsemi
691,214
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37018
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Tc)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF4905STRLPBF
MOSFET P-CH 55V 42A D2PAK
Infineon Technologies
7,185
In Stock
1 : ¥22.25000
Cut Tape (CT)
800 : ¥12.42841
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
55 V
42A (Tc)
10V
20mOhm @ 42A, 10V
4V @ 250µA
180 nC @ 10 V
±20V
3500 pF @ 25 V
-
170W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
8-SOIC
FDS4470
MOSFET N-CH 40V 12.5A 8SOIC
onsemi
5,966
In Stock
1 : ¥22.25000
Cut Tape (CT)
2,500 : ¥6.97206
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
40 V
12.5A (Ta)
10V
9mOhm @ 12.5A, 10V
5V @ 250µA
63 nC @ 10 V
+30V, -20V
2659 pF @ 20 V
-
2.5W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.