Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRLML6401TRPBF MOSFET P-CH 12V 4.3A SOT23 Infineon Technologies	109,832 In Stock	1 : ¥3.28000 Cut Tape (CT) 3,000 : ¥0.88633 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	12 V	4.3A (Ta)	1.8V, 4.5V	50mOhm @ 4.3A, 4.5V	950mV @ 250µA	15 nC @ 5 V	±8V	830 pF @ 10 V	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
FDN306P MOSFET P-CH 12V 2.6A SUPERSOT3 onsemi	69,005 In Stock	1 : ¥3.53000 Cut Tape (CT) 3,000 : ¥1.20104 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	12 V	2.6A (Ta)	1.8V, 4.5V	40mOhm @ 2.6A, 4.5V	1.5V @ 250µA	17 nC @ 4.5 V	±8V	1138 pF @ 6 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DN3525N8-G MOSFET N-CH 250V 360MA TO243AA Microchip Technology	9,151 In Stock	1 : ¥7.22000 Cut Tape (CT) 2,000 : ¥5.33642 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	250 V	360mA (Tj)	0V	6Ohm @ 200mA, 0V	-	-	±20V	350 pF @ 25 V	Depletion Mode	1.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.