Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedTexas Instruments
Series
-NexFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta)100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 28A, 10V25mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.6 nC @ 4.5 V53 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
829.9 pF @ 10 V4230 pF @ 30 V
Power Dissipation (Max)
780mW (Ta)3.1W (Ta), 195W (Tc)
Supplier Device Package
8-VSON-CLIP (5x6)SOT-23-3
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMG3414U-7
MOSFET N-CH 20V 4.2A SOT23-3
Diodes Incorporated
178,773
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥1.07754
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
4.2A (Ta)
1.8V, 4.5V
25mOhm @ 8.2A, 4.5V
900mV @ 250µA
9.6 nC @ 4.5 V
±8V
829.9 pF @ 10 V
-
780mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
CSD18540Q5B
CSD18540Q5B
MOSFET N-CH 60V 100A 8VSON
Texas Instruments
4,801
In Stock
1 : ¥25.61000
Cut Tape (CT)
2,500 : ¥7.69459
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Ta)
4.5V, 10V
2.2mOhm @ 28A, 10V
2.3V @ 250µA
53 nC @ 10 V
±20V
4230 pF @ 30 V
-
3.1W (Ta), 195W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.